A
simple npn or pnp transistor has not much use in circuits. The hybridization of
npn/pnp transistor has offered us with BJT- Bipolar junction field effect
transistor, Field Effect Transistors (FET), Junction Field Effect Transistors
(JFET), Metal oxide semiconductor field effect transistor (MOSFET). Thus, we
can have the application of transistor with much greater power handling
capacity with reduced loss.
Fig: Simple transistor circuit, Water-in-pipe analogy
The
bipolar junction transistor (BJT), referred to as a transistor, is a
three-terminal solid-state device that operates on electric current much like a
valve does on water in a pipe. In the transistor circuit, the flow of current
(IC) can be regulated by adjusting a small control current in the base (IB);
the more IB, the more IC. In fact, IC could be 100 times (or more) larger than
IB.
Fig: NPN and PNP transistors (conventional current)
Fig:
A silicon transistor input (base) curve
The
base-emitter junction acts like a forward biased diode, meaning it must first
be given a forward-bias voltage (about 0.7 V for silicon transistors, 0.3 V for
germanium) before any appreciable base current flows at all. Once the base has
been elevated to the bias voltage, any further increase in base voltage will start
the base current flowing.
Field Effect Transistors (FET)
The
field effect transistor (FET) is another three-terminal solid-state amplifying
device. FETs perform the same job as the BJTs of the previous section, but
because of some advantages are becoming more common in power applications.
These advantages include high input impedance, high switching speeds, and less
temperature sensitivity. There are two types of FETs, the junction FET (JFET)
and the metal-oxide semiconductor FET (MOSFET). Both types have three
terminals; the drain (D), the source (S), and the gate (G). Also, FETs are made
to be either N-channel or P-channel; the type determines the direction of
current through the device.
Junction Field Effect Transistors (JFET)
The
simple JFET circuit is shown in Figure. The load current IDS passes through the
drain (D) to the source (S). The amount of drain current is controlled by the
voltage between the gate and the source (VGS) as contrasted with the BJT, where
the collector current is controlled by the base current.
Fig: Junction field effect transistor (JFET) operation
Metal oxide semiconductor field effect transistor (MOSFET)
MOSFETs
are particularly important in industry because power MOSFETs, which can handle
many amperes, are becoming more popular. In Figure, notice that in the FET
symbol the gate is shown as not even touching the rest of the device. This
means that the gate is capacitive coupled, causing a very high DC input
resistance and allowing for what is called the enhancement mode of operation.
In the enhancement mode, all gate voltages are positive.
Fig: A
metal oxide semiconductor field effect transistor (MOSFET)
Fig: Power
Electronics Component
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